EPC2016
Manufacturer Product Number:

EPC2016

Product Overview

Manufacturer:

EPC

DiGi Electronics Part Number:

EPC2016-DG

Description:

GANFET N-CH 100V 11A DIE
Detailed Description:
N-Channel 100 V 11A (Ta) Surface Mount Die

Inventory:

12815126
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

EPC2016 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
EPC
Packaging
-
Series
eGaN®
Product Status
Discontinued at Digi-Key
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id
2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 5 V
Vgs (Max)
+6V, -5V
Input Capacitance (Ciss) (Max) @ Vds
520 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 125°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die
Base Product Number
EPC20

Datasheet & Documents

Datasheets

Additional Information

Other Names
917-1027-2
917-1027-1
917-1027-6
Standard Package
2,500

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0040

Alternative Models

PART NUMBER
EPC2016C
MANUFACTURER
EPC
QUANTITY AVAILABLE
177045
DiGi PART NUMBER
EPC2016C-DG
UNIT PRICE
1.07
SUBSTITUTE TYPE
Direct
DIGI Certification
Related Products
infineon-technologies

SIPC03N60C3X1SA1

TRANSISTOR N-CH

microchip-technology

DN3765K4-G

MOSFET N-CH 650V 300MA TO252-3

infineon-technologies

IPD60R600CPBTMA1

MOSFET N-CH 600V 6.1A TO252-3

infineon-technologies

SPD02N80C3ATMA1

MOSFET N-CH 800V 2A TO252-3