Manufacturer Product Number:
FQD1N60CTM
Product Overview
Manufacturer:
Fairchild Semiconductor
DiGi Electronics Part Number:
FQD1N60CTM-DG
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description:
N-Channel 600 V 1A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount TO-252 (DPAK)
Inventory:
1490 Pcs New Original In Stock
12946814
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FQD1N60CTM Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Packaging
Bulk
Series
QFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 28W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet & Documents
Datasheets
Additional Information
Other Names
FAIFSCFQD1N60CTM
2156-FQD1N60CTM
Standard Package
1,110
Environmental & Export Classification
ECCN
EAR99
HTSUS
8542.39.0001
DIGI Certification
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