Manufacturer Product Number:
IMYH200R012M1HXKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IMYH200R012M1HXKSA1-DG
Description:
SIC DISCRETE
Detailed Description:
N-Channel 2000 V 123A (Tc) 552W (Tc) Through Hole PG-TO247-4-U04
Inventory:
64 Pcs New Original In Stock
13002630
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IMYH200R012M1HXKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
CoolSiC™
Product Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
2000 V
Current - Continuous Drain (Id) @ 25°C
123A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
16.5mOhm @ 60A, 18V
Vgs(th) (Max) @ Id
5.5V @ 48mA
Gate Charge (Qg) (Max) @ Vgs
246 nC @ 18 V
Vgs (Max)
+20V, -7V
FET Feature
-
Power Dissipation (Max)
552W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-U04
Package / Case
TO-247-4
Base Product Number
IMYH200
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP005427368
448-IMYH200R012M1HXKSA1
Standard Package
240
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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