Manufacturer Product Number:
IPD30N10S3L34ATMA2
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPD30N10S3L34ATMA2-DG
Description:
MOSFET_(75V 120V(
Detailed Description:
N-Channel 100 V 30A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11
Inventory:
13269117
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IPD30N10S3L34ATMA2 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
31mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.4V @ 29µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1976 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
57W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Additional Information
Other Names
SP005549680
448-IPD30N10S3L34ATMA2TR
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
DIGI Certification
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