Manufacturer Product Number:
IPI076N12N3GAKSA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPI076N12N3GAKSA1-DG
Description:
MOSFET N-CH 120V 100A TO262-3
Detailed Description:
N-Channel 120 V 100A (Tc) 188W (Tc) Through Hole PG-TO262-3
Inventory:
498 Pcs New Original In Stock
12803434
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPI076N12N3GAKSA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs
101 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6640 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
188W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI076
Datasheet & Documents
Datasheets
Additional Information
Other Names
IPI076N12N3 G-DG
2156-IPI076N12N3GAKSA1-448
SP000652738
IPI076N12N3 G
IPI076N12N3G
Standard Package
500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
IPP26CNE8N G
MOSFET N-CH 85V 35A TO220-3
IRFS4620TRLPBF
MOSFET N-CH 200V 24A D2PAK
IPB160N04S203ATMA1
MOSFET N-CH 40V 160A TO263-7
