IRF100P219AKMA1
Manufacturer Product Number:

IRF100P219AKMA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IRF100P219AKMA1-DG

Description:

MOSFET N-CH 100V TO247AC
Detailed Description:
N-Channel 100 V 203A (Tc) 3.8W (Ta), 341W (Tc) Through Hole PG-TO247-3

Inventory:

383 Pcs New Original In Stock
12989793
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

IRF100P219AKMA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
StrongIRFET™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
203A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs
210 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12020 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 341W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3

Datasheet & Documents

Additional Information

Other Names
SP005537805
448-IRF100P219AKMA1
Standard Package
25

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
stmicroelectronics

SCTWA90N65G2V

SILICON CARBIDE POWER MOSFET 650

onsemi

NTH4LN067N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

toshiba-semiconductor-and-storage

TPW5200FNH,L1Q

PB-F POWER MOSFET TRANSISTOR DSO

onsemi

NTMFS006N12MCT1G

POWER MOSFET, 120V SINGLE N CHAN