Manufacturer Product Number:
IRF1018ESLPBF
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IRF1018ESLPBF-DG
Description:
MOSFET N-CH 60V 79A TO262
Detailed Description:
N-Channel 60 V 79A (Tc) 110W (Tc) Through Hole TO-262
Inventory:
12803825
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IRF1018ESLPBF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
HEXFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
79A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP001550908
Standard Package
50
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
FDP038AN06A0
MANUFACTURER
onsemi
QUANTITY AVAILABLE
245
DiGi PART NUMBER
FDP038AN06A0-DG
UNIT PRICE
1.56
SUBSTITUTE TYPE
Direct
DIGI Certification
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