Manufacturer Product Number:
IRF630NL
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IRF630NL-DG
Description:
MOSFET N-CH 200V 9.3A TO262
Detailed Description:
N-Channel 200 V 9.3A (Tc) 82W (Tc) Through Hole TO-262
Inventory:
12804520
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IRF630NL Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
HEXFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
575 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
82W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet & Documents
Datasheets
Additional Information
Other Names
*IRF630NL
Standard Package
50
Environmental & Export Classification
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
RCX120N25
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
0
DiGi PART NUMBER
RCX120N25-DG
UNIT PRICE
1.05
SUBSTITUTE TYPE
Direct
DIGI Certification
Related Products
IRF9Z24NS
MOSFET P-CH 55V 12A D2PAK
IRF7233TRPBF
MOSFET P-CH 12V 9.5A 8SO
IRF1010NPBF
MOSFET N-CH 55V 85A TO220AB