Manufacturer Product Number:
IRF8010PBF
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IRF8010PBF-DG
Description:
MOSFET N-CH 100V 80A TO220AB
Detailed Description:
N-Channel 100 V 80A (Tc) 260W (Tc) Through Hole TO-220AB
Inventory:
1428 Pcs New Original In Stock
12803549
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IRF8010PBF Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tube
Series
HEXFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15mOhm @ 45A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3830 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
260W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF8010
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-IRF8010PBFINF
*IRF8010PBF
SP001575444
INFIRFIRF8010PBF
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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