IRFS59N10DPBF
Manufacturer Product Number:

IRFS59N10DPBF

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

IRFS59N10DPBF-DG

Description:

MOSFET N-CH 100V 59A D2PAK
Detailed Description:
N-Channel 100 V 59A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK

Inventory:

12805661
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IRFS59N10DPBF Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
HEXFET®
Product Status
Discontinued at Digi-Key
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25mOhm @ 35.4A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
114 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet & Documents

Datasheets

Additional Information

Other Names
INFIRFIRFS59N10DPBF
SP001571716
2156-IRFS59N10DPBF-IT
*IRFS59N10DPBF
Standard Package
50

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

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DIGI Certification
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