ISC073N12LM6ATMA1
Manufacturer Product Number:

ISC073N12LM6ATMA1

Product Overview

Manufacturer:

Infineon Technologies

DiGi Electronics Part Number:

ISC073N12LM6ATMA1-DG

Description:

OPTIMOS 6 POWER-TRANSISTOR,120V
Detailed Description:
N-Channel 120 V 13.4A (Ta), 86A (Tc) 3W (Ta), 125W (Tc) Surface Mount PG-TDSON-8

Inventory:

4071 Pcs New Original In Stock
13002850
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

ISC073N12LM6ATMA1 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™ 6
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
13.4A (Ta), 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
3.3V, 10V
Rds On (Max) @ Id, Vgs
7.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
2.2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8
Package / Case
8-PowerTDFN
Base Product Number
ISC073

Datasheet & Documents

Additional Information

Other Names
448-ISC073N12LM6ATMA1TR
448-ISC073N12LM6ATMA1DKR
448-ISC073N12LM6ATMA1CT
Standard Package
5,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
goford-semiconductor

G160P03KI

P-30V,-30A,RD(MAX)<16M@-10V,VTH-

diodes

DMP2037UFCL-7

MOSFET BVDSS: 8V~24V U-DFN1616-6

goford-semiconductor

G220P02D2

P-20V,-8A,RD(MAX)<[email protected],VTH-