Manufacturer Product Number:
ISC800P06LMATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
ISC800P06LMATMA1-DG
Description:
TRENCH 40<-<100V
Detailed Description:
P-Channel 60 V 19.6A (Tc) 83W (Tc) Surface Mount PG-TDSON-8
Inventory:
4433 Pcs New Original In Stock
12991616
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
ISC800P06LMATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
19.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
80mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
2V @ 724µA
Gate Charge (Qg) (Max) @ Vgs
14.8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8
Package / Case
8-PowerTDFN
Additional Information
Other Names
SP005412122
448-ISC800P06LMATMA1CT
448-ISC800P06LMATMA1DKR
448-ISC800P06LMATMA1TR
Standard Package
5,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
FBG10N05ASH
GAN FET HEMT 100V 5A 4FSMD-A
SQS180ENW-T1_GE3
AUTOMOTIVE N-CHANNEL 80 V (D-S)
IPP014N06NF2SAKMA1
TRENCH 40<-<100V
