Manufacturer Product Number:
SPI80N10L
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
SPI80N10L-DG
Description:
MOSFET N-CH 100V 80A TO262-3
Detailed Description:
N-Channel 100 V 80A (Tc) 250W (Tc) Through Hole PG-TO262-3-1
Inventory:
13064307
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SPI80N10L Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
-
Series
SIPMOS®
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
14mOhm @ 58A, 10V
Vgs(th) (Max) @ Id
2V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4540 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
SPI80N
Datasheet & Documents
Datasheets
Additional Information
Other Names
SP000014351
SPI80N10LX
Standard Package
500
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
STD80N10F7
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
2500
DiGi PART NUMBER
STD80N10F7-DG
UNIT PRICE
0.69
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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LOW POWER_LEGACY
