MSC080SMA330B4
Manufacturer Product Number:

MSC080SMA330B4

Product Overview

Manufacturer:

Microchip Technology

DiGi Electronics Part Number:

MSC080SMA330B4-DG

Description:

MOSFET SIC 3300 V 80 MOHM TO-247
Detailed Description:
N-Channel 3300 V 41A (Tc) 381W (Tc) Through Hole TO-247-4

Inventory:

12975992
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

MSC080SMA330B4 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Microchip Technology
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
3300 V
Current - Continuous Drain (Id) @ 25°C
41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
105mOhm @ 30A, 20V
Vgs(th) (Max) @ Id
2.97V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 20 V
Vgs (Max)
+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3462 pF @ 2400 V
FET Feature
-
Power Dissipation (Max)
381W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Base Product Number
MSC080

Datasheet & Documents

Datasheets

Additional Information

Other Names
150-MSC080SMA330B4
Standard Package
30

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
nexperia

PMPB17EPX

P-CHANNEL TRENCH MOSFET

nexperia

PXP015-30QLJ

P-CHANNEL TRENCH MOSFET

onsemi

FDY100PZ-G

MOSFET P-CH SC89

onsemi

FCB099N65S3

MOSFET N-CH 650V 30A D2PAK-3