Manufacturer Product Number:
PSMN2R0-60ES,127
Product Overview
Manufacturer:
NXP Semiconductors
DiGi Electronics Part Number:
PSMN2R0-60ES,127-DG
Description:
NEXPERIA PSMN2R0-60ES - 120A, 60
Detailed Description:
N-Channel 60 V 120A (Tc) 338W (Tc) Through Hole I2PAK
Inventory:
7334 Pcs New Original In Stock
12972984
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PSMN2R0-60ES,127 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
NXP Semiconductors
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
137 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9997 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
338W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
PSMN2R0
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-PSMN2R0-60ES,127-954
Standard Package
214
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
Vendor Undefined
REACH Status
REACH Unaffected
DIGI Certification
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