Manufacturer Product Number:
PSMN3R3-80ES,127
Product Overview
Manufacturer:
NXP USA Inc.
DiGi Electronics Part Number:
PSMN3R3-80ES,127-DG
Description:
ELEMENT, NCHANNEL, SILICON, MOSF
Detailed Description:
N-Channel 80 V 120A (Tc) 338W (Tc) Through Hole I2PAK
Inventory:
1415 Pcs New Original In Stock
12942544
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
PSMN3R3-80ES,127 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
NXP Semiconductors
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
139 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9961 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
338W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-PSMN3R3-80ES127
NEXNXPPSMN3R3-80ES,127
Standard Package
205
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
0000.00.0000
DIGI Certification
Related Products
CPH3407-TL-E
MOSFET N-CH
AUIRFSL8408
AUTOMOTIVE HEXFET N CHANNEL
AUIRFR5410-IR
AUTOMOTIVE HEXFET P CHANNEL
