FQA33N10
Manufacturer Product Number:

FQA33N10

Product Overview

Manufacturer:

onsemi

DiGi Electronics Part Number:

FQA33N10-DG

Description:

MOSFET N-CH 100V 36A TO3P
Detailed Description:
N-Channel 100 V 36A (Tc) 163W (Tc) Through Hole TO-3P

Inventory:

12847159
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FQA33N10 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
QFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
52mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
163W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA3

Datasheet & Documents

Datasheets

Additional Information

Standard Package
450

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
2SK1317-E
MANUFACTURER
Renesas Electronics Corporation
QUANTITY AVAILABLE
5608
DiGi PART NUMBER
2SK1317-E-DG
UNIT PRICE
3.29
SUBSTITUTE TYPE
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