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Manufacturer Product Number:
FQA55N10
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FQA55N10-DG
Description:
MOSFET N-CH 100V 61A TO3P
Detailed Description:
N-Channel 100 V 61A (Tc) 190W (Tc) Through Hole TO-3P
Inventory:
RFQ Online
12847522
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SUBMIT
FQA55N10 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
QFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
26mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
98 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2730 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA5
Datasheet & Documents
Datasheets
FQA55N10
Additional Information
Standard Package
450
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
2SK1317-E
MANUFACTURER
Renesas Electronics Corporation
QUANTITY AVAILABLE
5608
DiGi PART NUMBER
2SK1317-E-DG
UNIT PRICE
3.29
SUBSTITUTE TYPE
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PART NUMBER
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MANUFACTURER
IXYS
QUANTITY AVAILABLE
3
DiGi PART NUMBER
IXTQ75N10P-DG
UNIT PRICE
2.44
SUBSTITUTE TYPE
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PART NUMBER
HUF75639G3
MANUFACTURER
onsemi
QUANTITY AVAILABLE
415
DiGi PART NUMBER
HUF75639G3-DG
UNIT PRICE
1.49
SUBSTITUTE TYPE
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