Manufacturer Product Number:
FQI8N60CTU
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FQI8N60CTU-DG
Description:
MOSFET N-CH 600V 7.5A I2PAK
Detailed Description:
N-Channel 600 V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Through Hole TO-262 (I2PAK)
Inventory:
12851231
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FQI8N60CTU Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
QFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1255 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 147W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI8N60
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-FQI8N60CTU-OS
FAIFSCFQI8N60CTU
2832-FQI8N60CTU
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
STI4N62K3
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
0
DiGi PART NUMBER
STI4N62K3-DG
UNIT PRICE
0.46
SUBSTITUTE TYPE
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