Manufacturer Product Number:
MJD112-1G
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
MJD112-1G-DG
Description:
TRANS NPN DARL 100V 2A IPAK
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100 V 2 A 25MHz 1.75 W Through Hole I-PAK
Inventory:
153 Pcs New Original In Stock
12853107
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MJD112-1G Technical Specifications
Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
onsemi
Packaging
Tube
Series
-
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector Cutoff (Max)
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Power - Max
1.75 W
Frequency - Transition
25MHz
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
I-PAK
Base Product Number
MJD112
Datasheet & Documents
Datasheets
Additional Information
Other Names
ONSONSMJD112-1G
MJD1121G
=MJD112
MJD112-1GOS
2156-MJD112-1G-OS
Standard Package
75
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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