Manufacturer Product Number:
NP109N055PUJ-E1B-AY
Product Overview
Manufacturer:
Renesas Electronics Corporation
DiGi Electronics Part Number:
NP109N055PUJ-E1B-AY-DG
Description:
MOSFET N-CH 55V 110A TO263
Detailed Description:
N-Channel 55 V 110A (Ta) 1.8W (Ta), 220W (Tc) Surface Mount TO-263
Inventory:
12860286
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NP109N055PUJ-E1B-AY Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Renesas Electronics Corporation
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
110A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
180 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 220W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet & Documents
Datasheets
Additional Information
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
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