Manufacturer Product Number:
UPA2003C-A
Product Overview
Manufacturer:
Renesas Electronics Corporation
DiGi Electronics Part Number:
UPA2003C-A-DG
Description:
NPN SILICON EPITAXIAL DARLINGTON
Detailed Description:
Bipolar (BJT) Transistor Array 7 NPN Darlington 60V 500mA 900mW Through Hole 16-DIP
Inventory:
1875 Pcs New Original In Stock
12974873
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UPA2003C-A Technical Specifications
Category
Bipolar (BJT), Bipolar Transistor Arrays
Manufacturer
Renesas Electronics Corporation
Packaging
Bulk
Series
-
Product Status
Active
Transistor Type
7 NPN Darlington
Current - Collector (Ic) (Max)
500mA
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 350mA, 2V
Power - Max
900mW
Frequency - Transition
-
Operating Temperature
-30°C ~ 75°C
Mounting Type
Through Hole
Package / Case
16-DIP (0.300", 7.62mm)
Supplier Device Package
16-DIP
Datasheet & Documents
Datasheets
Additional Information
Other Names
RENRNSUPA2003C-A
2156-UPA2003C-A
Standard Package
299
Environmental & Export Classification
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
DIGI Certification
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