Manufacturer Product Number:
BSM180C12P3C202
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
BSM180C12P3C202-DG
Description:
SICFET N-CH 1200V 180A MODULE
Detailed Description:
N-Channel 1200 V 180A (Tc) 880W (Tc) Chassis Mount Module
Inventory:
11 Pcs New Original In Stock
12937633
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BSM180C12P3C202 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Bulk
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5.6V @ 50mA
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
9000 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
880W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
Module
Package / Case
Module
Base Product Number
BSM180
Datasheet & Documents
Datasheets
Additional Information
Other Names
846-BSM180C12P3C202
Standard Package
12
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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