Manufacturer Product Number:
SCT3120ALHRC11
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
SCT3120ALHRC11-DG
Description:
SICFET N-CH 650V 21A TO247N
Detailed Description:
N-Channel 650 V 21A (Tc) 103W Through Hole TO-247N
Inventory:
2250 Pcs New Original In Stock
13526631
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SCT3120ALHRC11 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tube
Series
-
Product Status
Not For New Designs
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
156mOhm @ 6.7A, 18V
Vgs(th) (Max) @ Id
5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
460 pF @ 500 V
FET Feature
-
Power Dissipation (Max)
103W
Operating Temperature
175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
SCT3120
Datasheet & Documents
Datasheets
Additional Information
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
SIHG22N60E-GE3
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
498
DiGi PART NUMBER
SIHG22N60E-GE3-DG
UNIT PRICE
1.88
SUBSTITUTE TYPE
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