Manufacturer Product Number:
IRF640
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
IRF640-DG
Description:
MOSFET N-CH 200V 18A TO220AB
Detailed Description:
N-Channel 200 V 18A (Tc) 125W (Tc) Through Hole TO-220
Inventory:
12874811
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IRF640 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
-
Series
MESH OVERLAY™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1560 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
IRF6
Datasheet & Documents
Datasheets
Additional Information
Other Names
497-2759-5-NDR
497-2759-5
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
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DiGi PART NUMBER
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