Manufacturer Product Number:
SCT027W65G3-4AG
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
SCT027W65G3-4AG-DG
Description:
TO247-4
Detailed Description:
N-Channel 650 V 60A (Tc) 313W (Tc) Through Hole TO-247-4
Inventory:
13269636
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SCT027W65G3-4AG Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
39.3mOhm @ 30A, 18V
Vgs(th) (Max) @ Id
4.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1229 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
313W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Additional Information
Other Names
497-SCT027W65G3-4AG
Standard Package
600
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
DIGI Certification
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