Manufacturer Product Number:
SCT30N120D2
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
SCT30N120D2-DG
Description:
SICFET N-CH 1200V 40A HIP247
Detailed Description:
N-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole HiP247™
Inventory:
12875915
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SCT30N120D2 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
-
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
270W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Base Product Number
SCT30
Additional Information
Standard Package
490
Environmental & Export Classification
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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