Manufacturer Product Number:
STB35N65DM2
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
STB35N65DM2-DG
Description:
MOSFET N-CH 650V 28A D2PAK
Detailed Description:
N-Channel 650 V 28A (Tc) 210W (Tc) Surface Mount D2PAK
Inventory:
12872154
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STB35N65DM2 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tape & Reel (TR)
Series
MDmesh™ M2
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
210W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
STB35
Datasheet & Documents
Datasheets
Additional Information
Other Names
-1138-STB35N65DM2CT
-1138-STB35N65DM2DKR
497-18244-1
497-18244-2
-1138-STB35N65DM2TR
497-18244-6
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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