Manufacturer Product Number:
STB6N65M2
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
STB6N65M2-DG
Description:
MOSFET N-CH 650V 4A D2PAK
Detailed Description:
N-Channel 650 V 4A (Tc) 60W (Tc) Surface Mount TO-263 (D2PAK)
Inventory:
12877379
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STB6N65M2 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Cut Tape (CT) & Digi-Reel®
Series
MDmesh™
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.8 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
226 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
STB6N
Datasheet & Documents
Datasheets
Additional Information
Other Names
-497-15047-6
497-15047-6
-497-15047-1
-497-15047-2
497-15047-1
497-15047-2
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IXFA7N80P
MANUFACTURER
IXYS
QUANTITY AVAILABLE
257
DiGi PART NUMBER
IXFA7N80P-DG
UNIT PRICE
1.67
SUBSTITUTE TYPE
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DIGI Certification
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