Manufacturer Product Number:
STP35N65DM2
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
STP35N65DM2-DG
Description:
MOSFET N-CH 650V 32A TO220
Detailed Description:
N-Channel 650 V 32A (Tc) 250W (Tc) Through Hole TO-220
Inventory:
12876724
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STP35N65DM2 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tube
Series
MDmesh™ DM2
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56.3 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2540 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP35
Datasheet & Documents
Datasheets
Additional Information
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
STW35N65DM2
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
360
DiGi PART NUMBER
STW35N65DM2-DG
UNIT PRICE
3.01
SUBSTITUTE TYPE
Parametric Equivalent
PART NUMBER
FCP130N60
MANUFACTURER
Fairchild Semiconductor
QUANTITY AVAILABLE
127
DiGi PART NUMBER
FCP130N60-DG
UNIT PRICE
2.72
SUBSTITUTE TYPE
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