STU6N65M2
Manufacturer Product Number:

STU6N65M2

Product Overview

Manufacturer:

STMicroelectronics

DiGi Electronics Part Number:

STU6N65M2-DG

Description:

MOSFET N-CH 650V 4A IPAK
Detailed Description:
N-Channel 650 V 4A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)

Inventory:

543 Pcs New Original In Stock
12879599
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STU6N65M2 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tube
Series
MDmesh™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.8 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
226 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (IPAK)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
STU6N65

Datasheet & Documents

Datasheets
ST(F,P,U)6N65M2

Additional Information

Other Names
-497-15044-5
497-15044-5
Standard Package
75

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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