STW27N60M2-EP
Manufacturer Product Number:

STW27N60M2-EP

Product Overview

Manufacturer:

STMicroelectronics

DiGi Electronics Part Number:

STW27N60M2-EP-DG

Description:

MOSFET N-CH 600V 20A TO247-3
Detailed Description:
N-Channel 600 V 20A (Tc) 170W (Tc) Through Hole TO-247-3

Inventory:

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12878563
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STW27N60M2-EP Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tube
Series
MDmesh™ M2-EP
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
163mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1320 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
STW27

Datasheet & Documents

Design Resources
STW27N60M2-EP Pspice Model
Datasheets
ST(P,W)27N60M2-EP Datasheet Spice Model Tutorial for Power MOSFETS

Additional Information

Other Names
497-16490-5
Standard Package
30

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

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