2SA1013-O,T6MIBF(J
Manufacturer Product Number:

2SA1013-O,T6MIBF(J

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

2SA1013-O,T6MIBF(J-DG

Description:

TRANS PNP 160V 1A TO92L
Detailed Description:
Bipolar (BJT) Transistor PNP 160 V 1 A 50MHz 900 mW Through Hole TO-92L

Inventory:

12889894
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2SA1013-O,T6MIBF(J Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 200mA, 5V
Power - Max
900 mW
Frequency - Transition
50MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92L
Base Product Number
2SA1013

Additional Information

Other Names
2SA1013-OT6MIBF(J
2SA1013OT6MIBFJ
Standard Package
1

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Alternative Models

PART NUMBER
KSA1013YBU
MANUFACTURER
onsemi
QUANTITY AVAILABLE
3030
DiGi PART NUMBER
KSA1013YBU-DG
UNIT PRICE
0.13
SUBSTITUTE TYPE
Parametric Equivalent
DIGI Certification
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