Manufacturer Product Number:
2SC3669-Y(T2OMI,FM
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
2SC3669-Y(T2OMI,FM-DG
Description:
TRANS NPN 80V 2A MSTM
Detailed Description:
Bipolar (BJT) Transistor NPN 80 V 2 A 100MHz 1 W Through Hole MSTM
Inventory:
12891429
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2SC3669-Y(T2OMI,FM Technical Specifications
Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 1A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA, 2V
Power - Max
1 W
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
SC-71
Supplier Device Package
MSTM
Base Product Number
2SC3669
Additional Information
Other Names
2SC3669-Y(T2OMIFM
2SC3669YT2OMIFM
Standard Package
1
Environmental & Export Classification
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
DIGI Certification
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