2SD2257,Q(J
Manufacturer Product Number:

2SD2257,Q(J

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

2SD2257,Q(J-DG

Description:

TRANS NPN 100V 3A TO220NIS
Detailed Description:
Bipolar (BJT) Transistor NPN 100 V 3 A 2 W Through Hole TO-220NIS

Inventory:

12889335
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2SD2257,Q(J Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 2A, 2V
Power - Max
2 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Base Product Number
2SD2257

Additional Information

Other Names
2SD2257Q(J
2SD2257QJ
Standard Package
1

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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