Manufacturer Product Number:
HN1C01FE-Y,LF
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
HN1C01FE-Y,LF-DG
Description:
TRANS 2NPN 50V 0.15A ES6
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6
Inventory:
12889566
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HN1C01FE-Y,LF Technical Specifications
Category
Bipolar (BJT), Bipolar Transistor Arrays
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
2 NPN (Dual)
Current - Collector (Ic) (Max)
150mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA, 6V
Power - Max
100mW
Frequency - Transition
80MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
HN1C01
Datasheet & Documents
Datasheets
Additional Information
Other Names
HN1C01FE-Y(T5LFTDKR
HN1C01FE-Y(T5LFTTR
HN1C01FE-Y,LF(T
HN1C01FE-YLFCT
HN1C01FE-Y,LF(B
HN1C01FE-YLFTR
HN1C01FE-YLFDKR
HN1C01FE-Y(T5LFTCT
HN1C01FE-Y(T5LFTDKR-DG
HN1C01FE-Y(T5L,F,T
HN1C01FE-Y(T5LFTCT-DG
HN1C01FE-Y(T5LFTTR-DG
Standard Package
4,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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