Manufacturer Product Number:
HN4B102J(TE85L,F)
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
HN4B102J(TE85L,F)-DG
Description:
PB-F POWER TRANSISTOR SMV MOQ=30
Detailed Description:
Bipolar (BJT) Transistor Array NPN, PNP 30V 1.8A, 2A 750mW Surface Mount SMV
Inventory:
2900 Pcs New Original In Stock
12988801
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HN4B102J(TE85L,F) Technical Specifications
Category
Bipolar (BJT), Bipolar Transistor Arrays
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
NPN, PNP
Current - Collector (Ic) (Max)
1.8A, 2A
Voltage - Collector Emitter Breakdown (Max)
30V
Vce Saturation (Max) @ Ib, Ic
140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 200mA, 2V
Power - Max
750mW
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-74A, SOT-753
Supplier Device Package
SMV
Base Product Number
HN4B102
Datasheet & Documents
Datasheets
Additional Information
Other Names
264-HN4B102J(TE85LF)TR
264-HN4B102J(TE85LF)TR-DG
264-HN4B102J(TE85L,F)DKR
264-HN4B102J(TE85L,F)TR-DG
264-HN4B102J(TE85L,F)TR
264-HN4B102J(TE85L,F)CT
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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