Manufacturer Product Number:
RN1902FE,LF(CT
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
RN1902FE,LF(CT-DG
Description:
TRANS 2NPN PREBIAS 0.1W ES6
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Inventory:
22 Pcs New Original In Stock
12891079
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RN1902FE,LF(CT Technical Specifications
Category
Bipolar (BJT), Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
RN1902
Datasheet & Documents
Datasheets
Additional Information
Other Names
RN1902FE(T5L,F,T)
RN1902FE(T5LFT)TR
RN1902FELF(CTCT
RN1902FELF(CTTR
RN1902FE(T5LFT)TR-DG
RN1902FE(T5LFT)CT
RN1902FE(T5LFT)CT-DG
RN1902FE,LF(CB
Standard Package
4,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
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DIGI Certification
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