RN1911FETE85LF
Manufacturer Product Number:

RN1911FETE85LF

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

RN1911FETE85LF-DG

Description:

TRANS 2NPN PREBIAS 0.1W ES6
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Inventory:

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12891129
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RN1911FETE85LF Technical Specifications

Category
Bipolar (BJT), Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Active
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
RN1911

Datasheet & Documents

Datasheets
RN1910,11FE Datasheet

Additional Information

Other Names
RN1911FE(TE85L,F)
RN1911FETE85LFCT
RN1911FETE85LFTR
RN1911FETE85LFDKR
Standard Package
4,000

Environmental & Export Classification

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Alternative Models

PART NUMBER
EMH4T2R
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
22408
DiGi PART NUMBER
EMH4T2R-DG
UNIT PRICE
0.08
SUBSTITUTE TYPE
Similar
PART NUMBER
MUN5215DW1T1G
MANUFACTURER
onsemi
QUANTITY AVAILABLE
8150
DiGi PART NUMBER
MUN5215DW1T1G-DG
UNIT PRICE
0.03
SUBSTITUTE TYPE
Similar
PART NUMBER
EMH3T2R
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
528
DiGi PART NUMBER
EMH3T2R-DG
UNIT PRICE
0.08
SUBSTITUTE TYPE
Similar
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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