Manufacturer Product Number:
TK13E25D,S1X(S
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK13E25D,S1X(S-DG
Description:
MOSFET N-CH 250V 13A TO220-3
Detailed Description:
N-Channel 250 V 13A (Ta) 102W (Tc) Through Hole TO-220-3
Inventory:
44 Pcs New Original In Stock
12889248
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TK13E25D,S1X(S Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
102W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
TK13E25
Datasheet & Documents
Datasheets
Additional Information
Other Names
TK13E25DS1XS
TK13E25DS1X(S
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IRF644PBF
MANUFACTURER
Vishay Siliconix
QUANTITY AVAILABLE
1392
DiGi PART NUMBER
IRF644PBF-DG
UNIT PRICE
0.65
SUBSTITUTE TYPE
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