Manufacturer Product Number:
TK7J90E,S1E
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK7J90E,S1E-DG
Description:
MOSFET N-CH 900V 7A TO3P
Detailed Description:
N-Channel 900 V 7A (Ta) 200W (Tc) Through Hole TO-3P(N)
Inventory:
25 Pcs New Original In Stock
12890324
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TK7J90E,S1E Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
π-MOSVIII
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3
Base Product Number
TK7J90
Datasheet & Documents
Datasheets
Additional Information
Other Names
TK7J90E,S1E(S
TK7J90ES1E
Standard Package
25
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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