Manufacturer Product Number:
TPN4R712MD,L1Q
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TPN4R712MD,L1Q-DG
Description:
MOSFET P-CH 20V 36A 8TSON
Detailed Description:
P-Channel 20 V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Inventory:
7052 Pcs New Original In Stock
12890723
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TPN4R712MD,L1Q Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
U-MOSVI
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
4300 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.1x3.1)
Package / Case
8-PowerVDFN
Base Product Number
TPN4R712
Datasheet & Documents
Datasheets
Additional Information
Other Names
TPN4R712MDL1QTR
TPN4R712MDL1QDKR
TPN4R712MDL1QCT
TPN4R712MD,L1Q(M
Standard Package
5,000
Environmental & Export Classification
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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