Manufacturer Product Number:
TP65H050G4BS
Product Overview
Manufacturer:
Transphorm
DiGi Electronics Part Number:
TP65H050G4BS-DG
Description:
650 V 34 A GAN FET
Detailed Description:
N-Channel 650 V 34A (Tc) 119W (Tc) Surface Mount TO-263
Inventory:
329 Pcs New Original In Stock
13001027
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
TP65H050G4BS Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Transphorm
Packaging
Tube
Series
SuperGaN®
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
119W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
TP65H050
Datasheet & Documents
Datasheets
Additional Information
Other Names
1707-TP65H050G4BS
Standard Package
50
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
G08N06S
MOSFET N-CH 60V 5A SOP-8
GT095N10D5
N100V,RD(MAX)<11M@10V,RD(MAX)<15
BUK4D38-20PX
SMALL SIGNAL MOSFET FOR AUTOMOTI
