IRF510L
Manufacturer Product Number:

IRF510L

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

IRF510L-DG

Description:

MOSFET N-CH 100V 5.6A TO262-3
Detailed Description:
N-Channel 100 V 5.6A (Tc) Through Hole TO-262-3

Inventory:

12868639
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

IRF510L Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
-
Series
-
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
5.6A (Tc)
Rds On (Max) @ Id, Vgs
540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRF510

Additional Information

Other Names
*IRF510L
Standard Package
50

Environmental & Export Classification

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
vishay-siliconix

IRF730ASTRL

MOSFET N-CH 400V 5.5A D2PAK

nxp-semiconductors

BUK7Y25-80E/CX

MOSFET N-CH 80V 39A LFPAK56

vishay-siliconix

IRFI820GPBF

MOSFET N-CH 500V 2.1A TO220-3

vishay-siliconix

IRFR214TR

MOSFET N-CH 250V 2.2A DPAK