Manufacturer Product Number:
SIDR392DP-T1-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIDR392DP-T1-GE3-DG
Description:
MOSFET N-CH 30V 82A/100A PPAK
Detailed Description:
N-Channel 30 V 82A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC
Inventory:
17843 Pcs New Original In Stock
12787632
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
SIDR392DP-T1-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
82A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
0.62mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
188 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
9530 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
6.25W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8DC
Package / Case
PowerPAK® SO-8
Base Product Number
SIDR392
Datasheet & Documents
Datasheets
Additional Information
Other Names
SIDR392DP-T1-GE3CT
SIDR392DP-T1-GE3TR
SIDR392DP-T1-GE3DKR
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
SUM90N06-4M4P-E3
MOSFET N-CH 60V 90A TO263
SIHP100N60E-GE3
MOSFET N-CH 600V 30A TO220AB
SUD50P08-26-E3
MOSFET P-CH 80V 50A TO252
