SIR876BDP-T1-RE3
Manufacturer Product Number:

SIR876BDP-T1-RE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIR876BDP-T1-RE3-DG

Description:

N-CHANNEL 100-V (D-S) MOSFET POW
Detailed Description:
N-Channel 100 V 13.6A (Ta), 51.4A (Tc) 5W (Ta), 71.4W (Tc) Surface Mount PowerPAK® SO-8

Inventory:

5475 Pcs New Original In Stock
12958796
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SIR876BDP-T1-RE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
13.6A (Ta), 51.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3040 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 71.4W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8

Datasheet & Documents

Datasheets
SIR876BDP-T1-RE3

Additional Information

Other Names
742-SIR876BDP-T1-RE3CT
742-SIR876BDP-T1-RE3TR
742-SIR876BDP-T1-RE3DKR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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