SIRA26DP-T1-RE3
Manufacturer Product Number:

SIRA26DP-T1-RE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIRA26DP-T1-RE3-DG

Description:

MOSFET N-CH 25V 60A PPAK SO-8
Detailed Description:
N-Channel 25 V 60A (Tc) 43.1W (Tc) Surface Mount PowerPAK® SO-8

Inventory:

6000 Pcs New Original In Stock
12915679
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SIRA26DP-T1-RE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds
2247 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
43.1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIRA26

Datasheet & Documents

Datasheets
SIRA26DP-T1-RE3

Additional Information

Other Names
SIRA26DP-T1-RE3-DG
SIRA26DP-T1-RE3CT
SIRA26DP-T1-RE3TR
SIRA26DP-T1-RE3DKR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Related Products
vishay-siliconix

SI1315DL-T1-GE3

MOSFET P-CH 8V 900MA SOT323

vishay-siliconix

SI4486EY-T1-GE3

MOSFET N-CH 100V 5.4A 8SO

nexperia

BUK7660-100A,118

MOSFET N-CH 100V 26A D2PAK

vishay-siliconix

SI7852DP-T1-E3

MOSFET N-CH 80V 7.6A PPAK SO-8