SIS429DNT-T1-GE3
Manufacturer Product Number:

SIS429DNT-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIS429DNT-T1-GE3-DG

Description:

MOSFET P-CH 30V 20A PPAK1212-8
Detailed Description:
P-Channel 30 V 20A (Tc) 27.8W (Tc) Surface Mount PowerPAK® 1212-8

Inventory:

RFQ Online
12916794
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SIS429DNT-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
21mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
27.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SIS429

Datasheet & Documents

Datasheets
SIS429DNT-T1-GE3

Additional Information

Standard Package
3,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Alternative Models

PART NUMBER
RF4E070GNTR
MANUFACTURER
Rohm Semiconductor
QUANTITY AVAILABLE
2425
DiGi PART NUMBER
RF4E070GNTR-DG
UNIT PRICE
0.12
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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