SISHA10DN-T1-GE3
Manufacturer Product Number:

SISHA10DN-T1-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SISHA10DN-T1-GE3-DG

Description:

MOSFET N-CH 30V 25A/30A PPAK
Detailed Description:
N-Channel 30 V 25A (Ta), 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH

Inventory:

RFQ Online
12920149
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SISHA10DN-T1-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET® Gen IV
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
25A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds
2425 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.6W (Ta), 39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8SH
Package / Case
PowerPAK® 1212-8SH
Base Product Number
SISHA10

Datasheet & Documents

Datasheets
SISHA10DN-T1-GE3

Additional Information

Other Names
2266-SISHA10DN-T1-GE3TR
SISHA10DN-T1-GE3CT
SISHA10DN-T1-GE3DKR
SISHA10DN-T1-GE3TR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Related Products
vishay-siliconix

SI3127DV-T1-GE3

MOSFET P-CH 60V 3.5A/13A 6TSOP

vishay-siliconix

SIE800DF-T1-E3

MOSFET N-CH 30V 50A 10POLARPAK

vishay-siliconix

SI9435BDY-T1-GE3

MOSFET P-CH 30V 4.1A 8SO

vishay-siliconix

SI9407BDY-T1-GE3

MOSFET P-CH 60V 4.7A 8SO