SQJ886EP-T1_GE3
Manufacturer Product Number:

SQJ886EP-T1_GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SQJ886EP-T1_GE3-DG

Description:

MOSFET N-CH 40V 60A PPAK SO-8
Detailed Description:
N-Channel 40 V 60A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8

Inventory:

5932 Pcs New Original In Stock
12917474
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SQJ886EP-T1_GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 15.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2922 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
55W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SQJ886

Datasheet & Documents

Datasheets
SQJ886EP-T1_GE3

Additional Information

Other Names
SQJ886EP-T1_GE3-DG
SQJ886EP-T1-GE3
SQJ886EP-T1-GE3-DG
SQJ886EP-T1_GE3DKR
SQJ886EP-T1_GE3CT
SQJ886EP-T1_GE3TR
Standard Package
3,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
Related Products
vishay-siliconix

SIHG20N50C-E3

MOSFET N-CH 500V 20A TO247AC

vishay-siliconix

SI4178DY-T1-E3

MOSFET N-CH 30V 12A 8SO

vishay-siliconix

SI4628DY-T1-GE3

MOSFET N-CH 30V 38A 8SO

vishay-siliconix

SI4384DY-T1-E3

MOSFET N-CH 30V 10A 8SO